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Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation
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  • Bingkun Wang,
  • Jun Jiang,
  • Kevin Baldwin,
  • Huijuan Wu,
  • Li Zheng,
  • Mingming Gong,
  • Xuehai Ju,
  • Gang Wang,
  • Caichao Ye,
  • Yongqiang Wang
Bingkun Wang
Ningbo University
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Jun Jiang
Nanjing University of Science and Technology
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Kevin Baldwin
Los Alamos National Laboratory
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Huijuan Wu
Ningbo University
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Li Zheng
Shanghai Institute of Microsystem and Information Technology
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Mingming Gong
Southern University of Science and Technology
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Xuehai Ju
Nanjing University of Science and Technology
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Gang Wang
Ningbo University

Corresponding Author:[email protected]

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Caichao Ye
Southern University of Science and Technology
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Yongqiang Wang
Los Alamos National Laboratory
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Abstract

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize layer-tunable graphene on arbitrary substrates without the post-synthesis layer transfer process. C ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates. Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed towards the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. ReaxFF was performed to elucidate the graphene formation mechanisms in this novel synthesis approach. Three ordinary devices using as-synthesized graphene were fabricated on Si, SiO2, and glass substrates to demonstrate the graphene quality of our layer-tunable and transfer-free synthesis approach and the excellent performance characteristics of these low-cost manufacturing devices: field-effect transistors, heating devices, and near-infrared photodetectors.
15 Nov 2023Submitted to Energy & Environmental Materials
17 Nov 2023Submission Checks Completed
17 Nov 2023Assigned to Editor
17 Nov 2023Review(s) Completed, Editorial Evaluation Pending
21 Nov 2023Reviewer(s) Assigned